etchant中文什么意思

例句与用法

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1. More often, all of the materials exposed to the etchant have a finite etch rate .
   通常，所有暴露在刻蚀剂中的材料都具有一定的刻蚀速率。
2. This etchant can show different defects , such as dislocations , grain boundaries , twins , te - rich inclusions and precipitates etc . , on different planes
   这种腐蚀剂能显示不同晶面上的多种缺陷，如位错、晶界、富te相等。
3. The addition of surfactant to etchant can protect surface from intense dissolution , and keep a relative similarity of dissolving activity between surface and tunnel walls . in order to gain a satisfactory enlargement of tunnels , the etchant temperature should be controlled at 70 - 90
   3a / cm ，严重，使比容降低;溶液中添加表面活性剂可以有效地抑制表面溶解，提高比容;适宜的扩孔条件为:温度80oc ; h +浓度lmol / l0
4. The relationship between capacitance and corrosion conditions in the enlargement of tunnels justifies the latter competition mechanism the varied etching conditions were implemented by enhancing the passivating characteristics and viscosity , changing the a13 + concentration , temperature of etchants and current pulsation . passivating acid in the etchant is conducive to the instant passivation of exposed areas on the foil surface , and hence sustains the balance of competition between aggressive anions and passivators , providing pit nucleatiori sites continuously
   通过侵蚀液中添加草酸、硫酸、乙二醇，改变侵蚀液al ~ ( 3 + )浓度和电流纹波等方法，研究了不同的侵蚀条件对隧道孔形貌和比容的影响，结果表明：草酸和硫酸既保护了铝箔表面又促进了隧道孔孔壁的迅速钝化，增加发孔密度。
5. In this paper , the flow pattern defects ( fpds ) were revealed by secco etchant and their shape , distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ) . the relationship between etching time and the tip structure of fpds was also discussed . furthermore , by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar , the annihilation mechanism of fpds was discussed in this paper
   本文将cz硅单晶片在secco腐蚀液中择优腐蚀后，用光学显微镜和原子力显微镜对流动图形缺陷( flowpatterndefects , fpds )在硅片中的形态、分布及其端部的微观结构进行了仔细地观察和研究，并讨论了腐蚀时间对fpds缺陷端部结构的影响；本文还通过研究ar气氛下快速退火( rapidthermalannealing , rta )对fpds缺陷密度的影响，初步探讨了fpds的消除机理。