The refractory metals and refractory metal silicides that are used to augment or replace the polysilicon are generally deposited by physical vapor deposition processes . 用于增强和取代多晶硅的难熔金属和难熔金属硅化物通常是用物理蒸发沉积工艺沉积的。
An analytical model for polysilicon quantization in mos devices 退化建模与仿真方法
The etch of polysilicon emitter bipolar technology 技术中多晶发射极的腐蚀
Piezoresistive effect of polysilicon films at high temperature 多晶硅薄膜的高温压阻效应
Preparation for polysilicon acid polyferric sulfatecoagulant 无机高分子混凝剂聚硅硫酸盐的制备