in the effective mass approximation, using the two-dimensional equivalent potential model and a simple two-parameter wave function, we calculate variationally the ground state binding energy and correlation energy of positively and negatively charged excitons in finite deep gaas-al0.33ga0.67as quantum wells . the results show fair agreement with the previous experimental results 在有效质量近似下,我们采用二维等效势模型,并且选取了数学形式简单、物理意义明确的两参数变分波函数,利用变分法数值计算了有限深gaas?al_(0.33)ga_(0.67)as量子阱中带电激子的基态束缚能及相关能,所得结果与实验结果符合得很好。
firstly, we calculate variationally the binding energy and correlation energy of excitons in finite deep gaas-al0.33ga0.67as quantum wells . in the calculation, we consider the effect of effective mass and dielectric constant mismatch in the two materials . the results we obtained are basically conformed to the ones obtained from the previous theory and experiment 首先,我们计算了有限深gaas-al_(0.33)ga_(0.67)as量子阱中激子的束缚能,其中考虑到了阱和垒两种材料中电子和空穴的有效质量以及介电常数的失配影响,我们计算得到的激子的束缚能及相关能与前人的理论结果和实验结果基本上相符合。