gettering造句
例句与造句
- Test method for gettering properties of barium flash getter
蒸散型钡吸气剂吸气性能测试方法 - Test method for gettering properties of non - evaporable getter
非蒸散型吸气剂吸气性能测试方法 - The influence of aluminium gettering on the multicrystalline silicon solar cell
铝吸杂对多晶硅太阳电池的影响 - Test methods of gas absorption characteristic for non - evaporation gettering materials and products
非蒸散型吸气材料及制品吸气性能测试方法 - Thus , an optimized gettering process obtained was 800 and following a slow cooling
氦微孔吸除热处理合适温度条件是800 ，冷却条件是慢降温方式。 - It's difficult to find gettering in a sentence. 用gettering造句挺难的
- Standard practice for determining gettering rate , sorption capacity , and gas content of nonevaporable getters in the molecular flow region
测量分子流动区域内不挥发吸收剂的吸收速率吸收能量及气体含量 - Cavity - gettering was studied by comparing varies of reversed leakage - current jr of above two kinds of diodes before and after thermal process
并与相同工艺条件下单面抛光二极管的实验结果比较。本实验分两个阶段进行。 - Recently , a new gettering technique , which cavities formed by high - dose helium - implantation and subsequent annealing at lower temperature is efficiently at gettering metal impurities , has been concentrated
近年来一种新的吸杂技术?氦微孔吸杂技术因其对金属杂质显著的吸除效果而备受关注。 - Also , the ncz ( nitrogen doped silicon ) , which is my laboratory research characteristic , is research focus at present because it has strong mechanical strength and advantage intrinsic gettering property
同时微氮硅单晶由于其较强的机械强度和内吸杂能力等优点是目前研究的热点，也是我们实验室的特色。 - The local pt diffusion is formed by the pt gettering by the hole defection deduced by hydrogen irradiation . the irradiation energy and dose definite the axial position and dose of the local pt diffusion respectively
本课题研究提出了新型的局域铂掺杂技术和电子辐照技术相结合的寿命控制技术,以期改善frd的综合性能。 - High leakage currents and soft reverse current - voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix . gettering procedures can reduce metal contamination
由于金属杂质原子扩散并沉积在器件的有源区，会造成诸如：反向漏电流较大，反向击穿电压是软击穿等有害的影响。 - The efficiency and the homogeneity of cavities gettering were analyzed by measuring the leakage - current for the diodes in a wafer , which was thermally treated at the optimal condition , that is 700 1hr , then 800 6hr and slow cooling down
第二阶段，氦微孔吸杂效果的研究。采用做有二极管的大硅片在700 lhr + 800 6hr + ’漫降温的热处理条件下对微孔吸杂的效率、均匀性进行实验。 - The n / n + and p / p + epitaxial structures , which become popular with the development of coms technology , because they can avoid the latch - up and a softerror of ulsi while they combined with the intrinsic gettering ( ig ) technique
Coms工艺中普遍采用n / n ~ + 、 p / p ~ +的外延结构，这种以重掺杂硅片为衬底的外延结构与内吸杂工艺相结合，是解决集成电路中的闩锁效应和粒子引起的软失效的有效途径。 - Many gettering techniques have been widely studied to overcome this problem by removing metal impurities from active regions of device . one new gettering method that has recently received growing interest is the use of nanocavities resulting from helium or hydrogen implantation
所以需要减小有源区中金属杂质的浓度，通常采用吸除的方法把金属杂质从器件有源区吸收到有源区之外预先形成的sink (陷阱)中。 - The samples that annealed at different temperatures and different cooling ways ( fast or slow ) , separately , was compared . the experimental results showed that the temperature and the cooling - way of the gettering process were very important for the gettering efficiency
之后二极管分别进行退火温度700 6hr 、 800 6hr 、 900 6hr和退火后快、慢降温方式下j _ r值的比较，结果表明吸除热处理摘要abstraer温度对于吸杂效果至关重要。
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