pn结的英文

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英文翻译
造句

pn junction

pn p.n.＝ 1.promissory not ...
结 p-n junction
结结动词(长出果实或种子) bear (fruit); form (seed) 开花结果 blossom and bear fruit; 今年桃树结果不会多。 the peach trees are not going to bear well this year. 这树结一种红色的坚果。 this tree bears a hard red fruit. 这些花结子儿了。 these flowers have gone to seed.
pn p.n.＝ 1.promissory note 【商业】本票，期票。 2.please note 请注意。
osler结 osler's node
结, 小结 noduli; nodulus
结,结节 nodi
小瘤,结 tubercle
black pn 对硝基黑
lewatit pn 卢泰特pn磺酚阳离子交换树脂
pn boundary pn边界; pn间界; pn界面
pn bw 止水条
pn consult 人民和国家咨询公司
pn junction pn接面; pn结
pn solution 静脉营养输液
pn test 蚀斑中和试验
pn-junction pn接面
pn≥0pn0mpapa 公称压力为
pn边界 pn boundary
pn间界 pn boundary
pn接面 pn junction; pn-junction
pn界面 pn boundary
【医学】膀胱(结)石。 vesical calculus
对话结构 dialogue structure
附聚（作用）；结（大） agglomeration

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例句与用法

And the resistance will decrease with the increasing of the volume fraction of steel fiber
2 、试验研究了由cfrc和sfrc制成的水泥基pn结。
2 ) the cement - based pn - junctions are tested in experiments . experiments show that the cement - based pn - junctions have a good unilateral conductivity
水泥基pn结有良好的单向导电性，并且随时间的增加反向饱和电流越小。
In order to comprehend schottky gate of organic static induction transistor , chapter two expatiates characteristics of pn junction and schottky junction
为了理解有机静电感应三极管的肖特基栅极原理，本文在第二章阐述了pn结和肖特基结的特性。
The impacts of the substrate pn junction isolation on the inductor quality factor ( q ) are studied and experimental results show that a certain deep substrate pn junction isolation achieves good improvement
结果表明这种方法是可行的， b一一定深度的衬底pn结隔离能有效的使q值提高。
The one dimensional continuity equations of n - on - p planar pn junction are solved at different boundary conditions . generalized solutions of photocarrier concentration are given in this paper
摘要对一维情况下平面pn结的连续性方程进行了求解，给出了不同边界条件下光生载流子浓度的一般形式解，并对结果进行了分析讨论。
According to the analysis of physical quantities in the body , we got a conclusion that the effect of pn junction on schottky is through its depletion layer and the gap between two pn junctions
通过对器件体内各物理量的定量分析，得出pn结对肖特基的作用是通过其耗尽层和两pn结之间的间隙来影响肖特基的导电沟道这一结论。
Because temperature is a factor in the " diode equation , " and we want the two pn junctions to behave identically under all operating conditions , we should maintain the two transistors at exactly the same temperature
因为温度出现在二极管方程中，为了让两个pn结在所有条件下都具有同样的行为，就必须让两者处在精确相同的温度下。
This paper analyses the numerical simulation problems of the semiconductor devices deeply . a one dimensional pn junction diode is worked out satisfyingly by the recursive method with the matlab5 . 3 software
论文深入的分析了半导体器件的数值模拟问题，利用matlab5 . 3等计算机工具，用解三对角矩阵方程的递归算法，实现了pn结二极管的一维求解，取得了比较满意的结果。
It also put forward that how to select appropriate epilayer doping concentration and thickness , pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps . a power dissipation model of 4h - sic mps was established
通过对4h - sicmps击穿特性的二维模拟，提出如何选择合适的pn结深度、外延层掺杂浓度和厚度以及如何运用jte终端技术来提高击穿电压。
In the design of the device , a kind of junction termination technology , polysilicon field plate was introduced at the edge of source and drain of the device . it reduced the electric field of pn junction and nn + at the surface to avoid breakdown at the two points
在器件设计过程中,在源端和漏端都采用了多晶场板技术,减小了表面pn结和nn +处的峰值电场,避免了器件在这两处过早击穿。