cascode中文是什么意思

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中文翻译
造句

共射共基放大器
栅-阴放大器
栅地阴地放大器共射共基放大器
栅地-阴地放大器

cascode amplifier 叠接放大器; 共基放大器; 共阴共栅放大器; 阴地-栅地级联放大器; 阴地栅地放大器; 阴地栅地级联放大器涡尔曼放大器
cascode circuit 栅地; 渥尔曼放大电路
cascode converter 渥尔曼变换器
cascode inverter 栅-阴倒相器; 栅阴导相器; 栅阴反相器
cascode preamplifier 共阴共栅前置放大器
cascode pulse 栅地-阴地输入脉冲; 栅阴输入脉冲
cascode stage 共源共栅级
cascode emitter-coupled logic 共射
cascode pulse circuit 共基-共射脉冲电路
cascode transistor circuit 串联晶体管电路
cascode video output 射地-基地视频输出电路
casco signal company ltd 卡斯柯信号有限公司
casco resin 液状脲醛树脂
casco projects ltd 卡斯科建设工程有限公司
casco insurance 船壳险船壳保险
casco gmbh 卡斯科有限公司

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例句与用法

The lna with source inductor degeneration is analyzed in detail , which is used most widely in current . base on the analysis , a cascode structure is presented to minimize the effect of gate - drain capacitance cgd
针对目前lna中应用最广泛的源极电感负反馈结构,进行了详细分析,在此基础上对该结构做出了优化,采用共源共栅级联结构,减小了栅漏电容cgd的影响。
The drive stage is made up of cascode class - f topology . a “ big ” mosfet is used in the class - e output stage . the thesis did the simulation of the pa by ads with the tsmc 0 . 18 m rf cmos model , and completed the layout of the pa
本文设计了一种新颖的射频cmos功率放大器,采用两级差分结构,用f类共源共栅结构作为驱动级,输出级采用大尺寸mos管的e类功率放大器。
The full noise and linearity analysis of the low noise amplifier ( lna ) constructed by cascode structure with source degeneration and the optimization methods of the two mosfets in this structure according to the noise and linearity performance
I对共源共栅瞩ascode ）源极去耦旧ourcedegeneration ）结构低噪放做了完整的噪声和线性分析，得到该结构中两个mosfet针对噪声性能和线性性能的优化方法。
The main research content about this two subcircuits are as follows : 1 . the precision and dynamic range of several typical current mirrors are discussed and an active input regulated - cascode output current mirror is adopted as the current duplicate circuits in ccii
在这两个子电路中主要进行了如下研究: 1 .研究了几种常用的电流镜的电流传输精度和动态范围,并最终选择有源输入校准型电流镜作为电流传输器中的电流传输电路。
On the one hand , the design uses low voltage cascode op framework to improve its gain ; on the other hand , it applies self - bias and cascode structure to the whole sensing circuit . by using the improved method , we have successfully obtained low power consumption , low offset , high linear and high psrr ptat current generator under low power supply
在电路设计上一方面改进运放结构,采用低压共源共栅结构以提高其增益,另一方面整体传感电路采用自偏置结构和共源共栅电流镜结构,在低电源电压下成功设计了低功耗、低失调、高线性度和高电源电压抑制比的ptat电流产生电路。
The thesis has done the widespread investigation and study to the domestic and foreign ’ s technologies of analogy low voltage and low power , and analyzes the principles of work , merts and shortcomings of these technologies , based on the absorption of these technologies , it designs a 1 . 5v low power rail - to - rail cmos operational amplifier . when designing input stage , in order to enable the input common mode voltage range to achieve rail - to - rail , it does not use the traditional differential input pair , but use the nmos tube and the pmos tube parallel supplementary differential input pair to the structure , and uses the proportional current mirror technology to realize the constant transconductance of input stage . in the middle gain stage design , the current mirror load does not use the traditional standard cascode structure , but uses the low voltage , wide - swing casecode structure which is suitable to work in low voltage . when designing output stage , in order to enhance the efficiency , it uses the push - pull common source stage amplifier as the output stage , the output voltage swing basically reached rail - to - rail . the thesis changes the design of the traditional normal source based on the operational amplifier , uses the differential amplifier with current mirror load to design a normal current source . the normal current source provides the stable bias current and the bias voltage to the operational amplifier , so the stability of operational amplifier is guaranteed . the thesis uses the miller compensate technology with a adjusting zero resistance to compensate the operational amplifier
本论文对国内外的模拟低电压低功耗技术做了广泛的调查研究,分析了这些技术的工作原理和优缺点,在吸收这些技术成果基础上设计了一个1 . 5v低功耗轨至轨cmos运算放大器。在设计输入级时,为了使输入共模电压范围达到轨至轨,不是采用传统的差动输入结构,而是采用了nmos管和pmos管并联的互补差动输入对结构,并采用成比例的电流镜技术实现了输入级跨导的恒定;在中间增益级设计中,电流镜负载并不是采用传统的标准共源共栅结构,而是采用了适合在低压工作的低压宽摆幅共源共栅结构;在输出级设计时,为了提高效率,采用了推挽共源级放大器作为输出级,输出电压摆幅基本上达到了轨至轨;本论文改变传统基准源基于运放的设计,采用了带电流镜负载的差分放大器设计了一个基准电流源,给运放提供稳定的偏置电流和偏置电压,保证了运放的稳定性;并采用了带调零电阻的密勒补偿技术对运放进行频率补偿。
The traditional bandgap reference circuit was improved in the design , which includes the applying of self - bias structure and cascode structure , output of the opamp was used as self - bias voltage , saving bias circuit , and then it was helpful to get low power consumption . through using poly resistance of high value with low temperature coefficient , we reduced the influnce to circuit , if power supply did not change , we must decrease operating current to decrease power consumption , and increasing value of resistor could decrease the operating current efficiently . poly resistance of high value had large value of squared resistor , so we could save layout area
对传统带隙基准电路进行了改进设计,采用自偏置结构和镜像电流镜结构,利用运放的输出电压作为运放的偏置电压,节省了偏置电路,降低了功耗;使用低温度系数的多晶硅高值电阻,降低了电阻温漂对电路的影响;在电源电压不变的情况下,为了减小功耗就必须减小工作电流,而增大电阻的阻值能有效地减小工作电流,多晶硅高值电阻的方块电阻很大,可以节省版图面积。
By comparing and analyzing the advantages and disadvantages of three kinds of voltage reference circuits , type of current density ratio compensation 、 weak inversion type and type of poly gate work function , a cascode structure of type of current density ratio compensation is chosen to form the core of voltage reference circuit designed in this paper . applying the negative feedback technology , an output buffer and multiply by - 2 - circuits are designed , which improve the current driving capability
然后通过比较和分析电流密度比补偿型、弱反型工作型和多晶硅栅功函数差型三种带隙电压基准源电路结构的优缺点,确定了电流密度比补偿型共源共栅结构作为本设计核心电路结构,运用负反馈技术设计了基准输出缓冲电路、输出电压倍乘电路,改善了核心电路的带负载能力和电流驱动能力。