etching process中文是什么意思

发音:

中文翻译
造句

刻蚀过程

etching n. 1.蚀刻法；蚀刻(铜)版画；蚀镂术。 2.蚀刻画， ...
process vi. 〔口语〕排队走，列队行进〔procession ...
etching process chemical 蚀刻制程化学品
gravure etching process 凹版腐蚀法
etching n. 1.蚀刻法；蚀刻(铜)版画；蚀镂术。 2.蚀刻画，蚀刻版，蚀刻版印刷品。 close [rough] etching (晶体的)精[粗]蚀。 electrochemical etching 电化浸蚀，电抛光。
acid etching 酸蚀处理; 酸蚀刻; 酸性浸蚀
after etching 残余腐蚀; 后腐蚀; 后侵蚀
alkaline etching 碱腐蚀法; 碱侵蚀
anisotropic etching 蛤异性腐蚀; 各向异性刻蚀; 各向异性蚀刻，非等向性蚀刻
anode etching 阳极电解腐蚀
anodic etching 阳极浸蚀法; 阳极侵蚀
arc etching 电弧刻蚀
batch etching 成批腐蚀
bright etching 光亮酸蚀刻
bring etching 光亮蚀刻
calligraphic etching 先用钢笔和墨水在清洁的铜版上画出图形然后蚀刻的方法
cathodic etching 阴极侵蚀; 阴极蚀刻
catodic etching 阴极浸蚀
chemical etching 化学腐蚀法; 化学腐蚀加工; 化学浸蚀; 化学刻蚀; 化学侵蚀法; 化学蚀刻
chemmical etching 化学腐蚀法
clean etching 张条凸版修整腐蚀
clear etching 透明酸蚀刻
close etching 精蚀晶体
closed etching 精蚀
color etching 着色腐蚀

"查查词典"手机版

千万人都在用的超大词汇词典翻译APP

例句与用法

Process parameters related to the film quality are discussed ; relations are found between the etching rate and different process parameters when sio2 and cr thin films are etched in an inductively coupled plaslma ( icp ) etching equipment ; the tmah eroding solution ’ s ph value under different temperatures and concentrations are studied , since the etching process can be controlled by the ph value
3 .初步研究了利用pecvd淀积si3n4薄膜的工艺,讨论了影响薄膜质量的相关工艺参数;初步研究了用icp刻蚀sio2和cr的相关工艺;通过分析不同浓度tmah腐蚀液在不同温度下其ph值的变化,研究了以溶液ph值作为腐蚀溶液的控制参数。
In order to make integration of theory with practice , a lot of experiments have been done . mask - making technology , photoetching and wet - etching processes have been optimized . the author also presents the application and commercial value of silicon v - groove arrays
在实践上，对制作工艺积极探索，提出新的制备硅掩蔽膜的工艺方案，对影响光刻质量的因素深入分析，试验摸索出适用于v型槽的各向异性湿法腐蚀的腐蚀液配方，独立优化设计了制作硅v型槽的相关工艺，制作出高质量的硅v型槽。
The stronger combination of fiber and matrix after plasma treatment was discovered . the mechanism of reinforcement of interface combination with plasma treatment was developed as follows : by means of plasma treatment , the wettability of fiber ' s surface was increased , specific area of fiber was enhanced owing to the etching process , the meshing engagement between fiber and matrix was enhanced . with the same parameter ( power , vacuum degree , processing gas ) , the optimum time of plasma treatment is 1 2 minutes
证明了纤维的等离子体处理对纤维与基体的界面结合的提高作用；分析了纤维的等离子体处理增强界面结合的作用机理：一为提高了纤维表面的浸润性；二为对纤维表面的刻蚀作用，增加了纤维的比表面积，同时增强了纤维与基体界面间的机械啮合作用；并得出了在相同处理参数（功率、真空度和工作气体）下等离子体处理的最佳时间为1 2分钟。